Hanjin Lim

Hanjin Lim

Samsung Electronics, South Korea - Gyeonggi / South Korea
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4438352
삼성전자, 한국
person_outline Hanjin Lim's MOST POPULAR ARTICLES
1-) Capacitor that includes dielectric layer structure having plural metal oxides doped with different impuritiesK Park, J Insang, LIM HanJin, Y Lee, J LeeUS Patent 8,698,221, 20141802014
2-) Storage electrode of a semiconductor memory deviceYS Yu, SS Kim, KH Hwang, HJ Lim, SJ ChoiUS Patent 6,809,363, 2004712004
3-) Conduction barrier offset engineering for DRAM capacitor scalingM Pešić, S Knebel, K Cho, C Jung, J Chang, H Lim, N Kolomiiets, ...Solid-State Electronics 115, 133-139, 2016442016
4-) 5.6 A 1/2.65 in 44Mpixel CMOS image sensor with 0.7 µm pixels fabricated in advanced full-depth deep-trench isolation technologyHC Kim, J Park, I Joe, D Kwon, JH Kim, D Cho, T Lee, C Lee, H Park, ...2020 IEEE International Solid-State Circuits Conference-(ISSCC), 104-106, 2020442020
5-) Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodesM Pešić, S Knebel, M Geyer, S Schmelzer, U Böttger, N Kolomiiets, ...Journal of Applied Physics 119 (6), 2016432016