Haoqing Xu

Haoqing Xu

Institute of Microelectronics, Chinese Academy of Sciences - Beijing / China
Engineering & Technology / Computer Science
AD Scientific Index ID: 5097349
-
person_outline Haoqing Xu's MOST POPULAR ARTICLES
1-) A machine learning approach for optimization of channel geometry and source/drain doping profile of stacked nanosheet transistors H Xu, W Gan, L Cao, C Yang, J Wu, M Zhou, H Qu, S Zhang, H Yin, Z Wu IEEE Transactions on Electron Devices 69 (7), 3568-3574, 2022 82022
2-) Layout optimization of complementary FET 6T-SRAM cell based on a universal methodology using sensitivity with respect to parasitic-and-valuesY Luo, L Cao, Q Zhang, Y Cao, Z Zhang, J Yao, G Yan, X Zhang, W Gan, ...IEEE Transactions on Electron Devices 69 (11), 6095-6101, 202282022
3-) Novel channel-first fishbone FETs with symmetrical threshold voltages and balanced driving currents using single work function metal processL Cao, Q Zhang, Y Luo, J Gu, W Gan, P Lu, J Yao, H Xu, P Zhao, K Luo, ...IEEE Transactions on Electron Devices 69 (11), 5971-5977, 2022102022
4-) Investigation of novel hybrid channel complementary FET scaling beyond 3-nm node from device to circuitY Luo, Q Zhang, L Cao, W Gan, H Xu, Y Cao, J Gu, R Xu, G Yan, J Huo, ...IEEE Transactions on Electron Devices 69 (7), 3581-3588, 2022122022
5-) Geometric variability aware quantum potential based quasi-ballistic compact model for stacked 6 nm-thick silicon nanosheet GAA-FETsS Huang, Z Wu, H Xu, J Guo, L Xu, XL Duan, Q Chen, G Yang, Q Zhang, ...2021 IEEE International Electron Devices Meeting (IEDM), 18.5. 1-18.5. 4, 2021112021