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Harald Gossner
AD Scientific Index 2024
Natural Sciences / Physics
Intel Corporation - Kaliforniya / United States
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Harald Gossner's MOST POPULAR ARTICLES
1-)
A Tunnel FET forScaling Below 0.6 V With a CMOS-Comparable PerformanceR Asra, M Shrivastava, KVRM Murali, RK Pandey, H Gossner, VR RaoIEEE Transactions on Electron Devices 58 (7), 1855-1863, 20111872011
2-)
Insights into the design and optimization of tunnel-FET devices and circuitsA Pal, AB Sachid, H Gossner, VR RaoIEEE Transactions on Electron devices 58 (4), 1045-1053, 20111332011
3-)
Physical insight toward heat transport and an improved electrothermal modeling framework for FinFET architecturesM Shrivastava, M Agrawal, S Mahajan, H Gossner, T Schulz, DK Sharma, ...IEEE Transactions on Electron Devices 59 (5), 1353-1363, 20121082012
4-)
Simulation methods for ESD protection developmentH Gossner, K Esmark, W StadlerElsevier, 2003902003
5-)
A review on the ESD robustness of drain-extended MOS devicesM Shrivastava, H GossnerIEEE Transactions on Device and Materials Reliability 12 (4), 615-625, 2012882012
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