Haris Naeem Abbasi

Haris Naeem Abbasi

South University of Science and Technology of China - Shenzhen / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4729140
南方科技大学
person_outline Haris Naeem Abbasi's MOST POPULAR ARTICLES
1-) Normally-off hydrogen-terminated diamond field effect transistor with yttrium gateM Zhang, W Wang, S Fan, G Chen, HN Abbasi, F Lin, F Wen, J Zhang, ...Carbon 176, 307-312, 2021222021
2-) Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiOx Gate MaterialsM Zhang, W Wang, G Chen, HN Abbasi, Y Wang, F Lin, F Wen, K Wang, ...IEEE Transactions on Electron Devices 67 (11), 4784-4788, 2020242020
3-) LiF/Al₂O₃ as dielectrics for MOSFET on single crystal hydrogen-terminated diamondYF Wang, W Wang, HN Abbasi, X Chang, X Zhang, T Zhu, Z Liu, W Song, ...IEEE Electron Device Letters 41 (6), 808-811, 2020242020
4-) Fabrication of a diamond concave microlens array for laser beam homogenizationY Liang, T Zhu, M Xi, HN Abbasi, J Fu, R Su, Z Song, H Wang, K WangOptics & Laser Technology 136, 106738, 2021222021
5-) Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3YF Wang, W Wang, X Chang, HN Abbasi, X Zhang, R Wang, HX WangDiamond and Related Materials 99, 107532, 2019192019