NEWS
Free Institutional Consultancy Services
New Feature: Compare Your Institution with the Previous Year
Find a Professional: Explore Experts Across 197 Disciplines in 220 Countries!
Find a Professional
Print Your Certificate
New! Young University / Institution Rankings 2025
New! Art & Humanities Rankings 2025
New! Social Sciences and Humanities Rankings 2025
Highly Cited Researchers 2025
AD
Scientific Index 2025
Scientist Rankings
University Rankings
Subject Rankings
Country Rankings
login
Login
person_add
Register
insights
H-Index Rankings
insights
i10 Productivity Rankings
format_list_numbered
Citation Rankings
subject
University Subject Rankings
school
Young Universities
format_list_numbered
Top 100 Scientists
format_quote
Top 100 Institutions
format_quote
Compare & Choose
local_fire_department
Country Reports
person
Find a Professional
Hasan Nayfeh
IBM Corporation - New York / United States
Natural Sciences / Physics
AD Scientific Index ID: 4463678
Registration, Add Profile,
Premium Membership
Print Your Certificate
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Subject Leaders
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
Hasan Nayfeh's MOST POPULAR ARTICLES
1-)
Evidence for the utility of quantum computing before fault toleranceY Kim, A Eddins, S Anand, KX Wei, E Van Den Berg, S Rosenblatt, ...Nature 618 (7965), 500-505, 20233982023
2-)
Demonstration of quantum volume 64 on a superconducting quantum computing systemP Jurcevic, A Javadi-Abhari, LS Bishop, I Lauer, DF Bogorin, M Brink, ...Quantum Science and Technology 6 (2), 025020, 20213982021
3-)
Strained silicon MOSFET technologyJL Hoyt, HM Nayfeh, S Eguchi, I Aberg, G Xia, T Drake, EA Fitzgerald, ...Digest. International Electron Devices Meeting,, 23-26, 20023802002
4-)
High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallizationCH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ...2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 20141892014
5-)
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithographyP Agnello, T Ivers, C Warm, R Wise, R Wachnik, D Schepis, S Sankaran, ...2006 International Electron Devices Meeting, 1-4, 20061322006
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept