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Heesung Lee
Apple Inc - Los Altos / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4463685
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Heesung Lee's MOST POPULAR ARTICLES
1-)
MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy GapHS Lee, SW Min, YG Chang, MK Park, T Nam, H Kim, JH Kim, S Ryu, S ImNano letters 12 (7), 3695-3700, 201213712012
2-)
MoS2 nanosheets for top-gate nonvolatile memory transistor channelHS Lee, SW Min, MK Park, YT Lee, PJ Jeon, JH Kim, S Ryu, S ImSmall 8 (20), 3111-3115, 20122522012
3-)
Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogainDK Hwang, YT Lee, HS Lee, YJ Lee, SH Shokouh, J Kyhm, J Lee, HH Kim, ...NPG Asia Materials 8 (1), e233-e233, 20161132016
4-)
Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode CircuitsPJ Jeon, JS Kim, JY Lim, Y Cho, A Pezeshki, HS Lee, S Yu, SW Min, S ImACS applied materials & interfaces 7 (40), 22333-22340, 20151452015
5-)
Graphene Versus Ohmic Metal as Source‐Drain Electrode for MoS2 Nanosheet Transistor ChannelYT Lee, K Choi, HS Lee, SW Min, PJ Jeon, DK Hwang, HJ Choi, S ImSmall 10 (12), 2356-2361, 20141092014
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