Helmut Puchner

Helmut Puchner

Cypress Semiconductor - California / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 5050604
person_outline Helmut Puchner's MOST POPULAR ARTICLES
1-) Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for … US Patent 6,331,468, 2001
2-) Silicon carbide CMOS channel US Patent 6,358,806, 2002
3-) The contribution of low-energy protons to the total on-orbit SEU rate IEEE Transactions on Nuclear Science 62 (6), 2440-2451, 2015
4-) Dual nitrogen implantation techniques for oxynitride formation in semiconductor devices US Patent 6,323,106, 2001
5-) The contribution of low-energy protons to the total on-orbit SEU rateNA Dodds, MJ Martinez, PE Dodd, MR Shaneyfelt, FW Sexton, JD Black, ...IEEE Transactions on Nuclear Science 62 (6), 2440-2451, 2015952015