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Heng Wu
Purdue University - West Lafayette / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1596804
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Heng Wu's MOST POPULAR ARTICLES
1-)
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...Nano letters 14 (11), 6275-6280, 20146422014
2-)
Vertical field-effect transistor with uniform bottom spacerJ Li, K Cheng, P Xu, H WuUS Patent App. 15/830,665, 20191512019
3-)
20–80nm channel length InGaAs gate-all-around nanowire MOSFETs with EOT= 1.2 nm and lowest SS= 63mV/decJJ Gu, XW Wang, H Wu, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye2012 International Electron Devices Meeting, 27.6. 1-27.6. 4, 20121082012
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High-performance MoS2field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ...2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014882014
5-)
Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applicationsJ Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ...2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019782019
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