Hiroshi Amano 天野　浩

Hiroshi Amano 天野　浩

Nagoya University - Nagoya / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 545900
名古屋大学
person_outline Hiroshi Amano 天野　浩's MOST POPULAR ARTICLES
1-) Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerH Amano, N Sawaki, I Akasaki, Y ToyodaApplied Physics Letters 48 (5), 353-355, 198632011986
2-) P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)H Amano, M Kito, K Hiramatsu, I AkasakiJapanese journal of applied physics 28 (12A), L2112, 198929731989
3-) Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wellsT Takeuchi, S Sota, M Katsuragawa, M Komori, H Takeuchi, HAH Amano, ...Japanese Journal of Applied Physics 36 (4A), L382, 199714561997
4-) The 2018 GaN power electronics roadmapH Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...Journal of Physics D: Applied Physics 51 (16), 163001, 201811792018
5-) Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPEI Akasaki, H Amano, Y Koide, K Hiramatsu, N SawakiJournal of crystal growth 98 (1-2), 209-219, 198911491989