Hock M. Ng

Hock M. Ng

Nokia - Espoo / Finland
Engineering & Technology / Computer Science
AD Scientific Index ID: 4412993
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person_outline Hock M. Ng's MOST POPULAR ARTICLES
1-) The role of dislocation scattering in n-type GaN films Applied physics letters 73 (6), 821-823, 1998
2-) Intersubband absorption at λ∼ 1.55 μm in well-and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers Applied Physics Letters 77, 3722, 2000
3-) GaN nanotip pyramids formed by anisotropic etching Journal of applied physics 94 (1), 650-653, 2003
4-) Molecular-beam epitaxy of GaN/AlGaN multiple quantum wells on R-plane (1012) sapphire substratesHM NgApplied physics letters 80, 4369, 20023642002
5-) GaN nanotip pyramids formed by anisotropic etchingHM Ng, NG Weimann, A ChowdhuryJournal of applied physics 94 (1), 650-653, 20032302003