Hryhorii Stanchu

Hryhorii Stanchu

University of Arkansas Fayetteville - Fayetteville / United States
Engineering & Technology / Nanoscience and Nanotechnology
AD Scientific Index ID: 4851485
University of Arkansas
person_outline Hryhorii Stanchu's MOST POPULAR ARTICLES
1-) X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substratesNV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ...Semiconductor physics quantum electronics & optoelectronics, 2013272013
2-) Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si (001) substrateHV Stanchu, AV Kuchuk, YI Mazur, J Margetis, J Tolle, SQ Yu, GJ SalamoApplied Physics Letters 116 (23), 2020232020
3-) Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlatticesHV Stanchu, AV Kuchuk, M Barchuk, YI Mazur, VP Kladko, ZM Wang, ...CrystEngComm 19 (22), 2977-2982, 2017232017
4-) Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) SubstrateAV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ...ACS applied materials & interfaces 7 (41), 23320-23327, 2015222015
5-) Quantitative correlation study of dislocation generation, strain relief, and Sn outdiffusion in thermally annealed GeSn epilayersHV Stanchu, AV Kuchuk, YI Mazur, K Pandey, FM de Oliveira, ...Crystal Growth & Design 21 (3), 1666-1673, 2021212021