Hsueh-Chung Chen

Hsueh-Chung Chen

IBM Corporation - New York / United States
Business & Management / Business Administration
AD Scientific Index ID: 4463773
person_outline Hsueh-Chung Chen's MOST POPULAR ARTICLES
1-) A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels Electron Devices Meeting (IEDM), 2016 IEEE International, 2.7. 1-2.7. 4, 2016
2-) Method and apparatus for enhanced CMP planarization using surrounded dummy design US Patent 7,235,424, 2007
3-) 22 nm technology compatible fully functional 0.1 μm2 6T-SRAM cell International Electron Devices Meeting, 2008
4-) Integration of EUV lithography in the fabrication of 22-nm node devices SPIE, 2009
5-) Polishing pad for a chemical mechanical polishing process US Patent 6,544,373, 2003