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J -P Han
IBM Corporation - New York / United States
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AD Scientific Index ID: 4463852
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J -P Han's MOST POPULAR ARTICLES
1-)
Why is nonvolatile ferroelectric memory field-effect transistor still elusive?TP Ma, JP HanIEEE Electron Device Letters 23 (7), 386-388, 20024662002
2-)
Ferroelectric field effect transistors for memory applicationsJ Hoffman, X Pan, JW Reiner, FJ Walker, JP Han, CH Ahn, TP MaAdvanced materials 22 (26‐27), 2957-2961, 20102912010
3-)
Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectricsW Zhu, JP Han, TP MaIEEE Transactions on Electron Devices 51 (1), 98-105, 20042872004
4-)
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learningS Kim, M Ishii, S Lewis, T Perri, M BrightSky, W Kim, R Jordan, GW Burr, ...2015 IEEE international electron devices meeting (IEDM), 17.1. 1-17.1. 4, 20152042015
5-)
Electrode dependence of hydrogen-induced degradation in ferroelectric and thin filmsJP Han, TP MaApplied physics letters 71 (9), 1267-1269, 19971841997
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