Jasmin Hofstetter

Jasmin Hofstetter

Massachusetts Institute of Technology - Cambridge / United States
Others
AD Scientific Index ID: 1383728
person_outline Jasmin Hofstetter's MOST POPULAR ARTICLES
1-) Engineering Solutions and Root-Cause Analysis for Light-Induced Degradation in p-Type Multicrystalline Silicon PERC ModulesK Nakayashiki, J Hofstetter, AE Morishige, TTA Li, DB Needleman, ...IEEE Journal of Photovoltaics 6 (4), 860-868, 20161642016
2-) Lifetime spectroscopy investigation of light-induced degradation in p-type multicrystalline silicon PERCAE Morishige, MA Jensen, DB Needleman, K Nakayashiki, J Hofstetter, ...IEEE Journal of Photovoltaics 6 (6), 1466-1472, 2016922016
3-) Evolution of LeTID defects in p-type multicrystalline silicon during degradation and regenerationMA Jensen, AE Morishige, J Hofstetter, DB Needleman, T BuonassisiIEEE Journal of Photovoltaics 7 (4), 980-987, 2017902017
4-) Acceptable contamination levels in solar grade silicon: From feedstock to solar cellJ Hofstetter, JF Lelièvre, C Del Cañizo, A LuqueMaterials Science and Engineering: B 159, 299-304, 2009902009
5-) Precipitated iron: A limit on gettering efficacy in multicrystalline siliconDP Fenning, J Hofstetter, MI Bertoni, G Coletti, B Lai, C Del Canizo, ...Journal of Applied Physics 113 (4), 2013702013