Jean-Pierre Teyssier

Jean-Pierre Teyssier

Keysight Technologies - Santa Rosa / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4964324
person_outline Jean-Pierre Teyssier's MOST POPULAR ARTICLES
1-) An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR O Jardel, F De Groote, T Reveyrand, JC Jacquet, C Charbonniaud, ... IEEE Transactions on Microwave Theory and Techniques 55 (12), 2660-2669, 2007 2862007
2-) 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization JP Teyssier, P Bouysse, Z Ouarch, D Barataud, T Peyretaillade, R Quéré IEEE Transactions on Microwave Theory and Techniques 46 (12), 2043-2052, 1998 1141998
3-) New trends for the nonlinear measurement and modeling of high-power RF transistors and amplifiers with memory effects P Roblin, DE Root, J Verspecht, Y Ko, JP Teyssier IEEE Transactions on Microwave Theory and Techniques 60 (6), 1964-1978, 2012 882012
4-) A drain-lag model for AlGaN/GaN power HEMTsO Jardel, F De Groote, C Charbonniaud, T Reveyrand, JP Teyssier, ...2007 IEEE/MTT-S international microwave symposium, 601-604, 2007622007
5-) Method and an apparatus for characterizing a high-frequency device-under-test in a large signal impedance tuning environmentJ Verspecht, JP TeyssierUS Patent 7,282,926, 2007502007