NEWS
Free Institutional Consultancy Services
New Feature: Compare Your Institution with the Previous Year
Find a Professional: Explore Experts Across 197 Disciplines in 220 Countries!
Find a Professional
Print Your Certificate
New! Young University / Institution Rankings 2025
New! Art & Humanities Rankings 2025
New! Social Sciences and Humanities Rankings 2025
Highly Cited Researchers 2025
AD
Scientific Index 2025
Scientist Rankings
University Rankings
Subject Rankings
Country Rankings
login
Login
person_add
Register
insights
H-Index Rankings
insights
i10 Productivity Rankings
format_list_numbered
Citation Rankings
subject
University Subject Rankings
school
Young Universities
format_list_numbered
Top 100 Scientists
format_quote
Top 100 Institutions
format_quote
Compare & Choose
local_fire_department
Country Reports
person
Find a Professional
Jeonho Kim
Interuniversity Microelectronics Centre - Leuven / Belgium
Others
AD Scientific Index ID: 5440020
Registration, Add Profile,
Premium Membership
Print Your Certificate
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Subject Leaders
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
Jeonho Kim's MOST POPULAR ARTICLES
1-)
Structural and electrical properties of and gate dielectrics in TaN gated nMOSCAP and nMOSFET devicesKJ Choi, JH Kim, SG Yoon, WC ShinJournal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004402004
2-)
Characterization of HfO2 and HfO x N y Gate Dielectrics Grown by PE Metallorganic CVD with a TaN Gate ElectrodeKJ Choi, JH Kim, SG YoonJournal of The Electrochemical Society 151 (4), G262, 2004322004
3-)
Electrical and reliability characteristics of HfO2 gate dielectric treated in N2 and NH3 plasma atmosphereJH Kim, KJ Choi, SG YoonApplied surface science 242 (3-4), 313-317, 2005282005
4-)
Methods of depositing a ruthenium filmJH Kim, HS Park, SW Choi, DR Jung, CS LeeUS Patent App. 12/337,141, 2009202009
5-)
Plasma nitration of HfO2 gate dielectric in nitrogen ambient for improvement of TaN/HfO2/Si performanceKJ Choi, JH Kim, SG YoonElectrochemical and solid-state letters 7 (10), F59, 2004172004
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept