Jin Gyun Kim

Jin Gyun Kim

IBM Corporation - New York / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4464009
person_outline Jin Gyun Kim's MOST POPULAR ARTICLES
1-) Methods of forming silicon dioxide layers using atomic layer depositionSH Lee, KH Hwang, JG Kim, SR Yang, H Kim, JT NohUS Patent App. 11/521,145, 20072932007
2-) Multi-layer nonvolatile memory devices having vertical charge storage regionsJG Kim, S Shin, C Soodoo, LEE Seung-YupUS Patent 8,008,722, 20112752011
3-) Semiconductor memory device having insulation patterns and cell gate patternsJG Kim, M Lee, K HwangUS Patent 8,084,819, 20111402011
4-) Fabrication of LiMn2O4 thin films by sol–gel method for cathode materials of microbatteryYJ Park, JG Kim, MK Kim, HT Chung, WS Um, MH Kim, HG KimJournal of Power Sources 76 (1), 41-47, 19981371998
5-) Preparation of LiMn2O4 thin films by a sol–gel methodYJ Park, JG Kim, MK Kim, HT Chung, HG KimSolid State Ionics 130 (3-4), 203-214, 20001182000