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Joel Barnett
Tokyo Electron - Tokyo / Japan
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AD Scientific Index ID: 4969865
東京エレクトロン
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Joel Barnett's MOST POPULAR ARTICLES
1-)
The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 094108, 2006 1892006
2-)
Nucleation and growth study of atomic layer deposited gate dielectrics resulting in improved scaling and electron mobility PD Kirsch, MA Quevedo-Lopez, HJ Li, Y Senzaki, JJ Peterson, SC Song, ... Journal of applied physics 99 (2), 023508, 2006 1442006
3-)
High-k gate stacks for planar, scaled CMOS integrated circuits HR Huff, A Hou, C Lim, Y Kim, J Barnett, G Bersuker, GA Brown, ... Microelectronic Engineering 69 (2-4), 152-167, 2003 1192003
4-)
Imaging local electronic corrugations and doped regions in grapheneBJ Schultz, CJ Patridge, V Lee, C Jaye, PS Lysaght, C Smith, J Barnett, ...Nature communications 2 (1), 372, 20111202011
5-)
Conventional n-channel MOSFET devices using single layer HfO/sub 2/and ZrO/sub 2/as high-k gate dielectrics with polysilicon gate electrodeY Kim, G Gebara, M Freiler, J Barnett, D Riley, J Chen, K Torres, JE Lim, ...International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001932001
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