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John A Ott
IBM Corporation - New York / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4464043
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John A Ott's MOST POPULAR ARTICLES
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High performance CMOS fabricated on hybrid substrate with different crystal orientationsM Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ...IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 20034202003
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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial grapheneJ Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...Nature communications 5 (1), 4836, 20144082014
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Characteristics and device design of sub-100 nm strained Si N-and PMOSFETsK Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ...2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 20023712002
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Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)AW Topol, DC La Tulipe, L Shi, SM Alam, DJ Frank, SE Steen, J Vichiconti, ...IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 20053612005
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Strained Si NMOSFETs for high performance CMOS technologyK Rim, S Koester, M Hargrove, J Chu, PM Mooney, J Ott, T Kanarsky, ...2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 20013472001
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