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John David Baniecki
Stanford University - Stanford / United States
Natural Sciences / Physics
AD Scientific Index ID: 1651494
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John David Baniecki's MOST POPULAR ARTICLES
1-)
The effect of stress on the dielectric properties of barium strontium titanate thin filmsTM Shaw, Z Suo, M Huang, E Liniger, RB Laibowitz, JD BanieckiApplied physics letters 75 (14), 2129-2131, 19994021999
2-)
(Ba, Sr) TiO 3 dielectrics for future stacked-capacitor DRAMDE Kotecki, JD Baniecki, H Shen, RB Laibowitz, KL Saenger, JJ Lian, ...IBM Journal of Research and Development 43 (3), 367-382, 19992601999
3-)
Dielectric relaxation of thin films from 1 mHz to 20 GHzJD Baniecki, RB Laibowitz, TM Shaw, PR Duncombe, DA Neumayer, ...Applied physics letters 72 (4), 498-500, 19982001998
4-)
Tuneable ferroelectric decoupling capacitorTM Shaw, WD Pricer, DA Neumayer, JD Baniecki, RB LaibowitzUS Patent 6,888,714, 2005982005
5-)
Hydrogen induced tunnel emission in Pt/(BaxSr1− x) Ti1+ yO3+ z/Pt thin film capacitorsJD Baniecki, RB Laibowitz, TM Shaw, C Parks, J Lian, H Xu, QY MaJournal of Applied Physics 89 (5), 2873-2885, 2001912001
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