John Hongguang Zhang

John Hongguang Zhang

GlobalFoundries - New York / United States
Engineering & Technology / Nanoscience and Nanotechnology
AD Scientific Index ID: 5050619
person_outline John Hongguang Zhang's MOST POPULAR ARTICLES
1-) Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ... 2017 Symposium on VLSI Technology, T230-T231, 2017 6662017
2-) A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 1602016
3-) Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts JH Zhang, C Radens, SJ Bentley, BA Cohen, KY Lim US Patent 9,530,866, 2016 852016
4-) Vertical gate-all-around TFETJH ZhangUS Patent 9,385,195, 2016762016
5-) A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devicesN Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ...2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019752019