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Joseph A. Hagmann
National Institute of Standards and Technology - Maryland / United States
Natural Sciences / Physics
AD Scientific Index ID: 5343279
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Joseph A. Hagmann's MOST POPULAR ARTICLES
1-)
Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructuresJA Hagmann, X Li, S Chowdhury, SN Dong, S Rouvimov, ...New Journal of Physics 19 (8), 085002, 2017712017
2-)
Atom‐by‐atom fabrication of single and few dopant quantum devicesJ Wyrick, X Wang, RV Kashid, P Namboodiri, SW Schmucker, ...Advanced Functional Materials 29 (52), 1903475, 2019562019
3-)
High resolution thickness measurements of ultrathin Si: P monolayers using weak localizationJA Hagmann, X Wang, P Namboodiri, J Wyrick, R Murray, MD Stewart, ...Applied Physics Letters 112 (4), 2018272018
4-)
Quantifying atom-scale dopant movement and electrical activation in Si: P monolayersX Wang, JA Hagmann, P Namboodiri, J Wyrick, K Li, RE Murray, A Myers, ...Nanoscale 10 (9), 4488-4499, 2018262018
5-)
Contact and noncontact measurement of electronic transport in individual 2d SnS colloidal semiconductor nanocrystalsAJ Biacchi, ST Le, BG Alberding, JA Hagmann, SJ Pookpanratana, ...ACS nano 12 (10), 10045-10060, 2018232018
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