Joseph Salzman

Joseph Salzman

Technion Israel Institute of Technology - Haifa / Israel
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 349786
הטכניון – מכון טכנולוגי לישראל
person_outline Joseph Salzman's MOST POPULAR ARTICLES
1-) Gain mechanism in GaN Schottky ultraviolet detectorsO Katz, V Garber, B Meyler, G Bahir, J SalzmanApplied physics letters 79 (10), 1417-1419, 20013142001
2-) Ion‐beam‐assisted lift‐off technique for three‐dimensional micromachining of freestanding single‐crystal diamondP Olivero, S Rubanov, P Reichart, BC Gibson, ST Huntington, J Rabeau, ...Advanced Materials 17 (20), 2427-2430, 20052062005
3-) Yellow luminescence and related deep levels in unintentionally doped GaN filmsI Shalish, L Kronik, G Segal, Y Rosenwaks, Y Shapira, U Tisch, J SalzmanPhysical Review B 59 (15), 9748, 19991951999
4-) Properties of carbon-doped GaNH Tang, JB Webb, JA Bardwell, S Raymond, J Salzman, C Uzan-SaguyApplied Physics Letters 78 (6), 757-759, 20011882001
5-) The anomalous bandgap bowing in GaAsNU Tisch, E Finkman, J SalzmanApplied physics letters 81 (3), 463-465, 20021682002