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Juan Paolo S Bermundo
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Nara Institute of Science & Technology - / Japan
奈良先端科学技術大学院大学
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Juan Paolo S Bermundo's MOST POPULAR ARTICLES
1-)
Effect of contact material on amorphous InGaZnO thin-film transistor characteristicsY Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, Y Osada, ...Japanese Journal of Applied Physics 53 (3S1), 03CC04, 2014462014
2-)
Highly reliable polysilsesquioxane passivation layer for a-InGaZnO thin-film transistorsJP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, Y UraokaECS Journal of Solid State Science and Technology 3 (2), Q16, 2013402013
3-)
Density of states in amorphous In-Ga-Zn-O thin-film transistor under negative bias illumination stressY Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, M Fujii, ...ECS Journal of Solid State Science and Technology 3 (9), Q3001, 2014342014
4-)
Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistorsJP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, MN Fujii, Y UraokaApplied Physics Letters 107 (3), 2015292015
5-)
Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emittersMA Khan, JP Bermundo, Y Ishikawa, H Ikenoue, S Fujikawa, E Matsuura, ...Nanotechnology 32 (5), 055702, 2020282020
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