Jun Yang

Jun Yang

Leibniz-Institut für Festkörper- und Werkstoffforschung - / Germany
Others
AD Scientific Index ID: 4573079
Leibniz Institute for Solid State and Materials Research
person_outline Jun Yang's MOST POPULAR ARTICLES
1-) High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate DielectricJ Yang, Y Zhang, Q Wu, C Dussarrat, J Qi, W Zhu, X Ding, J ZhangIEEE Transactions on Electron Devices 66 (8), 3382-3386, 2019362019
2-) Phonon characteristics, crystal structure, and intrinsic properties of a Y(Mg1/2 Sn1/2)O3 ceramicC Xing, J Li, H Chen, H Qiao, J Yang, H Dong, H Sun, J Wang, X Yin, ...Rsc Advances 7 (56), 35305-35310, 2017392017
3-) Low-temperature combustion synthesis and UV treatment processed p-type Li:NiOx active semiconductors for high-performance electronicsJ Yang, B Wang, Y Zhang, X Ding, J ZhangJournal of Materials Chemistry C 6 (46), 12584-12591, 2018382018
4-) Enhanced stability in Zr-doped ZnO TFTs with minor influence on mobility by atomic layer depositionJ Yang, Y Zhang, C Qin, X Ding, J ZhangIEEE Transactions on Electron Devices 66 (4), 1760-1765, 2019342019
5-) Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen SourcesJ Yang, A Bahrami, X Ding, S Lehmann, N Kruse, S He, B Wang, ...Advanced Materials Interfaces 9 (15), 2101953, 2022312022