Jung Hwan Yum

Jung Hwan Yum

University of Texas Austin - Austin / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1675911
University of Texas at Austin
person_outline Jung Hwan Yum's MOST POPULAR ARTICLES
1-) Metal oxide RRAM switching mechanism based on conductive filament microscopic propertiesG Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 20101482010
2-) Grain boundary-driven leakage path formation in HfO2 dielectricsG Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...Solid-State Electronics 65, 146-150, 20111332011
3-) Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: beryllium oxide, aluminum …JT Gaskins, PE Hopkins, DR Merrill, SR Bauers, E Hadland, DC Johnson, ...ECS Journal of Solid State Science and Technology 6 (10), N189, 2017812017
4-) Effects of barrier layers on device performance of high mobility In0. 7Ga0. 3As metal-oxide-semiconductor field-effect-transistorsH Zhao, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC LeeApplied Physics Letters 96 (10), 2010802010
5-) High performance In0. 7Ga0. 3As metal-oxide-semiconductor transistors with mobility> 4400 cm2/V s using InP barrier layerH Zhao, YT Chen, JH Yum, Y Wang, N Goel, JC LeeApplied Physics Letters 94 (19), 2009712009