Junyoung Kwon

Junyoung Kwon

Samsung Electronics, South Korea - Gyeonggi / South Korea
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4456336
삼성전자, 한국
person_outline Junyoung Kwon's MOST POPULAR ARTICLES
1-) Thickness-dependent Schottky barrier height of MoS2 field-effect transistorsJ Kwon*, JY Lee*, YJ Yu, CH Lee, X Cui, J Hone, GH LeeNanoscale 9 (18), 6151-6157, 20171312017
2-) Horizontal-to-vertical transition of 2D layer orientation in low-temperature chemical vapor deposition-grown PtSe2 and its influences on electrical properties and device …SS Han, JH Kim, C Noh, JH Kim, E Ji, J Kwon, SM Yu, TJ Ko, E Okogbue, ...ACS Applied Materials & Interfaces 11 (14), 13598-13607, 2019912019
3-) Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructuresJ Son†, J Kwon†, SP Kim, Y Lv, J Yu, JY Lee, H Ryu, K Watanabe, ...Nature Communications 9 (1), 1-9, 2018872018
4-) Artificial synaptic emulators based on MoS2 flash memory devices with double floating gatesSG Yi, MU Park, SH Kim, CJ Lee, J Kwon, GH Lee, KH Yoo*ACS Applied Materials & Interfaces 10 (37), 31480-31487, 2018822018
5-) Thickness-independent semiconducting-to-metallic conversion in wafer-scale two-dimensional PtSe2 layers by plasma-driven chalcogen defect engineeringMS Shawkat, J Gil, SS Han, TJ Ko, M Wang, D Dev, J Kwon, GH Lee, ...ACS Applied Materials & Interfaces 12 (12), 14341-14351, 2020662020