Karine Hestroffer

Karine Hestroffer

Humboldt Universität zu Berlin - Berlin / Germany
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1760034
Humboldt University of Berlin
person_outline Karine Hestroffer's MOST POPULAR ARTICLES
1-) Polarity in GaN and ZnO: Theory, measurement, growth, and devicesJ Zúñiga-Pérez, V Consonni, L Lymperakis, X Kong, A Trampert, ...Applied Physics Reviews 3 (4), 20161322016
2-) Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si (111)K Hestroffer, C Leclere, C Bougerol, H Renevier, B DaudinPhysical Review B 84 (24), 245302, 20111322011
3-) N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHzS Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ...IEEE Electron Device Letters 38 (3), 359-362, 2017892017
4-) The structural properties of GaN/AlN core–shell nanocolumn heterostructuresK Hestroffer, R Mata, D Camacho, C Leclere, G Tourbot, YM Niquet, ...Nanotechnology 21 (41), 415702, 2010982010
5-) 400%/W second harmonic conversion efficiency in 14 μm-diameter gallium phosphide-on-oxide resonatorsAD Logan, M Gould, ER Schmidgall, K Hestroffer, Z Lin, W Jin, ...Optics express 26 (26), 33687-33699, 2018662018