Kazuhide Kumakura （熊倉 一英）

Kazuhide Kumakura （熊倉 一英）

NTT Corporation - Tokyo / Japan
Others
AD Scientific Index ID: 4965770
日本電信電話株式会社
person_outline Kazuhide Kumakura （熊倉 一英）'s MOST POPULAR ARTICLES
1-) Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Y Kobayashi, K Kumakura, T Akasaka, T Makimoto Nature 484 (7393), 223-227, 2012 3732012
2-) Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence K Kumakura, T Makimoto, N Kobayashi, T Hashizume, T Fukui, ... Applied Physics Letters 86 (5), 052105, 2005 2652005
3-) Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy K Kumakura, T Makimoto, N Kobayashi Journal of applied physics 93 (6), 3370-3375, 2003 1712003
4-) Activation energy and electrical activity of Mg in Mg-doped InxGa1-xN (x< 0.2)K Kumakura, T Makimoto, N KobayashiJapanese Journal of Applied Physics 39 (4B), L337, 20001472000
5-) High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with baseT Makimoto, K Kumakura, N KobayashiApplied Physics Letters 79 (3), 380-381, 20011002001