Kazuki Shimazoe

Kazuki Shimazoe

Kyoto Institute of Technology - Kyoto / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4864117
京都工芸繊維大学
person_outline Kazuki Shimazoe's MOST POPULAR ARTICLES
1-) Demonstration of Bixbyite-Structured δ-Ga2O3 Thin Films Using β-Fe2O3 Buffer Layers by Mist Chemical Vapor DepositionT Kato, H Nishinaka, K Shimazoe, K Kanegae, M YoshimotoACS Applied Electronic Materials 5 (3), 1715-1720, 2023242023
2-) Phase control of α-and κ-Ga2O3 epitaxial growth on LiNbO3 and LiTaO3 substrates using α-Fe2O3 buffer layersK Shimazoe, H Nishinaka, Y Arata, D Tahara, M YoshimotoAIP Advances 10 (5), 2020242020
3-) Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor OxidesY Arata, H Nishinaka, K Shimazoe, M YoshimotoMRS Advances 5, 1671-1679, 202092020
4-) Homoepitaxial growth of Ge doped β-gallium oxide thin films by mist chemical vapor depositionT Ogawa, H Nishinaka, K Shimazoe, T Nagaoka, H Miyake, K Kanegae, ...Japanese Journal of Applied Physics 62 (SF), SF1016, 202392023
5-) Epitaxial growth of metastable c-plane rhombohedral indium tin oxide using mist chemical vapor depositionK Shimazoe, H Nishinaka, K Watanabe, M YoshimotoMaterials Science in Semiconductor Processing 147, 106689, 202282022