Ke Zeng

Ke Zeng

Stanford University - Stanford / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1669778
person_outline Ke Zeng's MOST POPULAR ARTICLES
1-) 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3MOSFETsK Zeng, A Vaidya, U SingisettiIEEE Electron Device Letters 39 (9), 1385-1388, 20181582018
2-) Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown VoltageS Sharma, K Zeng, S Saha, U SingisettiIEEE Electron Device Letters 41 (6), 836-839, 20201302020
3-) Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping TechnologyK Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ...IEEE Electron Device Letters 38 (4), 513-516, 20171232017
4-) Device-Level thermal management of gallium oxide field-effect transistorsB Chatterjee, K Zeng, CD Nordquist, U Singisetti, S ChoiIEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 20191342019
5-) Interface State Density in Atomic Layer Deposited SiO2/-Ga2O3() MOSCAPsK Zeng, Y Jia, U SingisettiIEEE Electron Device Letters 37 (7), 906-909, 20161172016