Keisuke Shinohara

Keisuke Shinohara

Teledyne Scientific - / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4985919
person_outline Keisuke Shinohara's MOST POPULAR ARTICLES
1-) Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications IEEE Transactions on Electron Devices 60 (10), 2982-2996, 2013
2-) Pseudomorphic In0. 52 Al0. 48 As/In0. 7 Ga0. 3 As HEMT’s with an ultrahigh f of 562 GHz IEEE Electron Device Lett 23 (10), 573-575, 2002
3-) Ultrahigh-Speed GaN High-Electron-Mobility Transistors Withof 454/444 GHz IEEE Electron Device Letters 36 (6), 549-551, 2015
4-) 220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic 2010 International Electron Devices Meeting, 30.1. 1-30.1. 4, 2010
5-) 547-GHz fT In0. 7Ga0. 3As-In0. 52Al0. 48As HEMTs with reduced source and drain resistance IEEE Electron Device Letters 25 (5), 241-243, 2004