Kentaro Kinoshita

Tokyo University of Science - Tokyo / Japan

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AD Scientific Index ID: 364111

東京理科大学

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Kentaro Kinoshita's MOST POPULAR ARTICLES

1-) Reduction in the reset current in a resistive random access memory consisting of brought about by reducing a parasitic capacitanceK Kinoshita, K Tsunoda, Y Sato, H Noshiro, S Yagaki, M Aoki, Y SugiyamaApplied Physics Letters 93 (3), 033506, 20083062008

2-) Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxideK Kinoshita, T Tamura, M Aoki, Y Sugiyama, H TanakaApplied physics letters 89 (10), 103509, 20062682006

3-) Low power and high speed switching of Ti-doped NiO ReRAM under the unipolar voltage source of less than 3 VK Tsunoda, K Kinoshita, H Noshiro, Y Yamazaki, T Iizuka, Y Ito, ...2007 IEEE International Electron Devices Meeting, 767-770, 20072412007

4-) Direct observation of oxygen movement during resistance switching in NiO/Pt filmC Yoshida, K Kinoshita, T Yamasaki, Y SugiyamaApplied Physics Letters 93 (4), 20082432008

5-) Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction modelY Sato, K Kinoshita, M Aoki, Y SugiyamaApplied physics letters 90 (3), 20071472007

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