Koichi Maezawa

Koichi Maezawa

University of Toyama - Toyama / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 364306
富山大学
person_outline Koichi Maezawa's MOST POPULAR ARTICLES
1-) A study on current collapse in AlGaN/GaN HEMTs induced by bias stressT Mizutani, Y Ohno, M Akita, S Kishimoto, K MaezawaIEEE Transactions on Electron Devices 50 (10), 2015-2020, 20032692003
2-) A new resonant tunneling logic gate employing monostable-bistable transitionKMK Maezawa, TMT MizutaniJapanese journal of applied physics 32 (1A), L42, 19931891993
3-) High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologiesKJ Chen, T Enoki, K Maezawa, K Arai, M YamamotoIEEE transactions on electron devices 43 (2), 252-257, 19961701996
4-) InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devicesKJ Chen, K Maezawa, M YamamotoIEEE Electron Device Letters 17 (3), 127-129, 19961691996
5-) High-speed and low-power operation of a resonant tunneling logic gate MOBILEK Maezawa, H Matsuzaki, M Yamamoto, T OtsujiIEEE Electron Device Letters 19 (3), 80-82, 19981671998