Leland Chang

Leland Chang

IBM Corporation - New York / United States
Others
AD Scientific Index ID: 4464329
person_outline Leland Chang's MOST POPULAR ARTICLES
1-) FinFET scaling to 10 nm gate lengthB Yu, L Chang, S Ahmed, H Wang, S Bell, CY Yang, C Tabery, C Ho, ...Digest. International Electron Devices Meeting,, 251-254, 20028732002
2-) Stable SRAM cell design for the 32 nm node and beyondL Chang, DM Fried, J Hergenrother, JW Sleight, RH Dennard, ...Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 128-129, 20058692005
3-) Sub 50-nm finfet: PmosX Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 19998391999
4-) Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufactureC Hu, TJ King, V Subramanian, L Chang, X Huang, YK Choi, ...US Patent 6,413,802, 20026862002
5-) Sub-50 nm P-channel FinFETX Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...IEEE Transactions on Electron Devices 48 (5), 880-886, 20016212001