Leqi Zhang

Mentor Graphics Corporation - / United States

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AD Scientific Index ID: 5285450

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Leqi Zhang's MOST POPULAR ARTICLES

1-) Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.1. 1-10.1. 4, 2013 1402013

2-) Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ... 2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013 1022013

3-) Analysis of complementary RRAM switching DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ... IEEE electron device letters 33 (8), 1186-1188, 2012 772012

4-) High-performance metal-insulator-metal tunnel diode selectorsB Govoreanu, C Adelmann, A Redolfi, L Zhang, S Clima, M JurczakIEEE electron device letters 35 (1), 63-65, 2013602013

5-) High-performance a-IGZO thin film diode as selector for cross-point memory applicationA Chasin, L Zhang, A Bhoolokam, M Nag, S Steudel, B Govoreanu, ...IEEE Electron Device Letters 35 (6), 642-644, 2014582014

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