Liangchun Yu

Liangchun Yu

General Electric Company - Boston / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4377888
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person_outline Liangchun Yu's MOST POPULAR ARTICLES
1-) Reliability issues of SiC MOSFETs: A technology for high-temperature environmentsCY Liangchun, GT Dunne, KS Matocha, KP Cheung, JS Suehle, K ShengIEEE Transactions on Device and Materials Reliability 10 (4), 418-426, 20102342010
2-) Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistorsS Dhar, S Haney, L Cheng, SR Ryu, AK Agarwal, LC Yu, KP CheungJournal of Applied Physics 108 (5), 054509, 20101192010
3-) Random telegraph noise in highly scaled nMOSFETsJP Campbell, J Qin, KP Cheung, LC Yu, JS Suehle, A Oates, K Sheng2009 IEEE International Reliability Physics Symposium, 382-388, 20091012009
4-) Modeling and optimal device design for 4H-SiC super-junction devicesL Yu, K ShengIEEE Transactions on Electron Devices 55 (8), 1961-1969, 2008622008
5-) Oxide reliability of SiC MOS devicesL Yu, KP Cheung, J Campbell, JS Suehle, K Sheng2008 IEEE International Integrated Reliability Workshop Final Report, 141-144, 2008472008