Manvi Agrawal

Manvi Agrawal

Nanyang Technological University - Jurong West / Singapore
Others
AD Scientific Index ID: 6089810
南洋理工大学
person_outline Manvi Agrawal's MOST POPULAR ARTICLES
1-) GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBEL Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...IEEE Sensors Journal 17 (1), 72-77, 2016412016
2-) AlGaN/GaN HEMT-based high-sensitive NO2 gas sensorsA Ranjan, M Agrawal, K Radhakrishnan, N DharmarasuJapanese Journal of Applied Physics 58 (SC), SCCD23, 2019232019
3-) Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxyL Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ...Journal of Applied Physics 117 (2), 2015232015
4-) Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxyN Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ...Applied physics express 5 (9), 091003, 2012232012
5-) Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress EngineeringS Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasuphysica status solidi (a) 217 (7), 1900818, 2020162020