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Mario Laudato
Western Digital Corporation - San Jose / United States
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AD Scientific Index ID: 4980716
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Mario Laudato's MOST POPULAR ARTICLES
1-)
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devicesW Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ...Nature communications 10 (1), 81, 20192222019
2-)
Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapsesS Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ...Frontiers in neuroscience 10, 56, 20162202016
3-)
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices E Ambrosi, A Bricalli, M Laudato, D Ielmini Faraday discussions 213, 87-98, 2019 752019
4-)
Bipolar switching in chalcogenide phase change memoryN Ciocchini, M Laudato, M Boniardi, E Varesi, P Fantini, AL Lacaita, ...Scientific reports 6 (1), 29162, 2016832016
5-)
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratioA Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini2016 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2016812016
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