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Martin L Green
National Institute of Standards and Technology - Maryland / United States
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AD Scientific Index ID: 4386905
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Martin L Green's MOST POPULAR ARTICLES
1-)
Ultrathin (< 4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limitsML Green, EP Gusev, R Degraeve, EL GarfunkelJournal of Applied Physics 90 (5), 2057-2121, 200110192001
2-)
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substratesEA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...Applied physics letters 59 (7), 811-813, 19919211991
3-)
Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal processML Green, GD WilkUS Patent 6,797,525, 20043772004
4-)
Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayersML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ...Journal of Applied Physics 92 (12), 7168-7174, 20023802002
5-)
The 2019 materials by design roadmapK Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ...Journal of Physics D: Applied Physics 52 (1), 013001, 20183482018
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