Masahito Ban

Masahito Ban

Nippon Institute of Technology - Miyashiro / Japan
Others
AD Scientific Index ID: 438907
日本工業大学
person_outline Masahito Ban's MOST POPULAR ARTICLES
1-) Internal stress reduction by incorporation of silicon in diamond-like carbon filmsM Ban, T HasegawaSurface and Coatings Technology 162 (1), 1-5, 20031072003
2-) Stress and structural properties of diamond-like carbon films deposited by electron beam excited plasma CVDM Ban, T Hasegawa, S Fujii, J FujiokaDiamond and related materials 12 (1), 47-56, 2003872003
3-) Tribological characteristics of Si-containing diamond-like carbon films under oil-lubricationM Ban, M Ryoji, S Fujii, J FujiokaWear 253 (3-4), 331-338, 2002752002
4-) Electron-beam excited plasma generator with side orifices in the discharge chamberM Ryoji, M Tokai, Y Mori, T Hasegawa, M BanUS Patent 5,942,854, 1999551999
5-) Plasma processing equipmentM Ryoji, T Hasegawa, M Ban, Y MoriUS Patent 6,211,622, 2001362001