Masataka Higashiwaki

Masataka Higashiwaki

National Institute of Information and Communications Technology - San Pedro / Japan
Others
AD Scientific Index ID: 4406102
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person_outline Masataka Higashiwaki's MOST POPULAR ARTICLES
1-) Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal -Ga2O3 (010) substratesM Higashiwaki, K Sasaki, A Kuramata, T Masui, S YamakoshiApplied Physics Letters 100 (1), 013504, 201213442012
2-) Ultrawide‐bandgap semiconductors: research opportunities and challengesJY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...Advanced Electronic Materials 4 (1), 1600501, 20188082018
3-) Recent progress in Ga2O3 power devicesM Higashiwaki, K Sasaki, H Murakami, Y Kumagai, A Koukitu, A Kuramata, ...Semiconductor Science and Technology 31 (3), 034001, 20168082016
4-) Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristicsM Higashiwaki, K Sasaki, T Kamimura, M Hoi Wong, D Krishnamurthy, ...Applied Physics Letters 103 (12), 20137812013
5-) Guest Editorial: The dawn of gallium oxide microelectronicsM Higashiwaki, GH JessenApplied Physics Letters 112 (6), 20186672018