Mauro Alberto Enciso Aguilar

Mauro Alberto Enciso Aguilar

Instituto Politécnico Nacional - Mexico City / Mexico
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 806702
National Polytechnic Institute
person_outline Mauro Alberto Enciso Aguilar's MOST POPULAR ARTICLES
1-) High performance 100 nm T-gate strained Si/Si0. 6Ge0. 4 n-MODFETF Aniel, M Enciso-Aguilar, L Giguerre, P Crozat, R Adde, T Mack, U Seiler, ...Solid-State Electronics 47 (2), 283-289, 2003462003
2-) Structure and mechanism formation of polyelectrolyte complex obtained from PSS/PAH system: effect of molar mixing ratio, base–acid conditions, and ionic strengthC Márquez-Beltrán, L Castañeda, M Enciso-Aguilar, G Paredes-Quijada, ...Colloid and Polymer Science 291 (3), 683-690, 2013282013
3-) DC and high frequency performance of 0.1 µm n-type Si/Si0. 6Ge0. 4 MODFET with fmax= 188 GHz at 300K and fmax= 230 GHz at 50KM Enciso-Aguilar, F Aniel, P Crozat, R Adde, HJ Herzog, T Hackbarth, ...Electronics Letters 39 (1), 149-151, 2003272003
4-) Indoor 2.4 GHz microwave propagation study using 3D FDTD approachJ Sosa, S Coss, A Rodríguez, L Rodríguez, M Galaz, E Ramírez, M EncisoElectronics letters 47 (24), 1308-1309, 2011252011
5-) 0.3 dB minimum noise figure at 2.5 GHz of 0.13 µm Si/Si0. 58Ge0. 42 n-MODFETsM Enciso, F Aniel, P Crozat, R Adde, M Zeuner, A Fox, T HackbarthElectronics Letters 37 (17), 1089-1090, 2001242001