Michele Baldini

Michele Baldini

Leibniz-Institut für Kristallzüchtung - Rome / Germany
Others
AD Scientific Index ID: 4434701
Leibniz Institute for Crystal Growth
person_outline Michele Baldini's MOST POPULAR ARTICLES
1-) 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped-Ga2O3MOSFETsAJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...IEEE Electron Device Letters 37 (7), 902-905, 20165842016
2-) Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltageKD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ...Applied Physics Letters 109 (21), 20163732016
3-) -Ga2O3 MOSFETs for Radio Frequency OperationAJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...IEEE Electron Device Letters 38 (6), 790-793, 20173342017
4-) Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substratesM Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G WagnerECS Journal of Solid State Science and Technology 6 (2), Q3040, 20163172016
5-) Recent progress in the growth of β-Ga2O3 for power electronics applicationsM Baldini, Z Galazka, G WagnerMaterials Science in Semiconductor Processing 78, 132-146, 20182442018