Mike Mccurdy

Mike Mccurdy

Vanderbilt University - Nashville / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1366482
person_outline Mike Mccurdy's MOST POPULAR ARTICLES
1-) Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTsJ Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013962013
2-) Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTsJ Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015812015
3-) A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodesP Nsengiyumva, DR Ball, JS Kauppila, N Tam, M McCurdy, WT Holman, ...IEEE Transactions on Nuclear Science 63 (1), 266-272, 2016642016
4-) Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applicationsNE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ...IEEE Transactions on Nuclear Science 62 (6), 2417-2422, 2015692015
5-) Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTsR Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ...IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016572016