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Min Gyu Sung
IBM Corporation - New York / United States
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AD Scientific Index ID: 4464633
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Min Gyu Sung's MOST POPULAR ARTICLES
1-)
Replacement metal gate and fabrication process with reduced lithography stepsMG Sung, C Park, H KimUS Patent 10,176,996, 20191902019
2-)
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channelsR Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 20161392016
3-)
Scaling Challenges for Advanced CMOS DevicesAP Jacob, R Xie, MG Sung, L Liebmann, RTP Lee, B TaylorScaling And Integration Of High-speed Electronics And Optomechanical Systems …, 20171042017
4-)
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOIKI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ...2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 20141102014
5-)
Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting productsR Xie, KY Lim, MG Sung, RRH KimUS Patent 9,412,616, 20161082016
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