Ming Qiao

Ming Qiao

University of Electronic Science & Technology of China - Chengdu / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 679019
电子科技大学
person_outline Ming Qiao's MOST POPULAR ARTICLES
1-) Ultralow specific on-resistance high-voltage SOI lateral MOSFETX Luo, J Fan, Y Wang, T Lei, M Qiao, B Zhang, F UdreaIEEE Electron Device Letters 32 (2), 185-187, 2011952011
2-) A 700-V junction-isolated triple RESURF LDMOS with N-type top layerM Qiao, Y Li, X Zhou, Z Li, B ZhangIEEE Electron Device Letters 35 (7), 774-776, 2014612014
3-) High-voltage technology based on thin layer SOI for driving plasma display panelsM Qiao, B Zhang, Z Xiao, J Fang, Z LiPower Semiconductor Devices and IC\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\'s, 2008. ISPSD\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\'08. 20th International …, 2008432008
4-) Novel Superjunction LDMOS (> 950 V) With a Thin Layer SOIW Zhang, Z Zhan, Y Yu, S Cheng, Y Gu, S Zhang, X Luo, Z Li, M Qiao, Z Li, ...IEEE Electron Device Letters 38 (11), 1555-1558, 2017432017
5-) A novel substrate-assisted RESURF technology for small curvature radius junctionM Qiao, X Hu, H Wen, M Wang, B Luo, X Luo, Z Wang, B Zhang, Z LiPower Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International …, 2011422011