Mohamed

Mohamed

University of Tripoli - Tripoli / Libya
Natural Sciences / Physics
AD Scientific Index ID: 5028641
person_outline Mohamed's MOST POPULAR ARTICLES
1-) Semiconductor thickness and back-gate voltage effects on the gate tunnel current in the MOS/SOI system with an ultrathin oxide IEEE Transactions on Electron Devices 47 (12), 2347-2351, 2000
2-) Theory of the MOS/SOI tunnel diode Microelectronic engineering 48 (1-4), 375-378, 1999
3-) Modeling of current-voltage characteristics of Metal-Oxide-Semiconductor/Silicon-On-Insulator (MOS/SOI) tunnel diode MH Badri The Institute of Microelectronics and Optoelectronics, 1999 1999
4-) A quantum factor correction for modelling the CV characteristics if the MOS-SOI structureM Badri, FA Ikraiam, B Majkusiak, RB BeckElectron Technology 32 (1/2), 130-132, 19991999