Mohit

Mohit

Japan Advanced Institute of Science & Technology - Matsue / Japan
Others
AD Scientific Index ID: 4812083
島根大学
person_outline Mohit's MOST POPULAR ARTICLES
1-) Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process T Murakami, K Haga, E Tokumitsu Japanese Journal of Applied Physics 59 (SP), SPPB03, 2020 132020
2-) Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 TreatmentMM Hasan, MM Islam, RN Bukke, E Tokumitsu, HY Chu, SC Kim, J JangIEEE Electron Device Letters 43 (5), 725-728, 2022172022
3-) Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT applicationK Haga, E TokumitsuJapanese Journal of Applied Physics 59 (SM), SMMB02, 2020152020
4-) Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution processT Miyasako, E TokumitsuJapanese Journal of Applied Physics 60 (SB), SBBM02, 2021132021
5-) High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealingMM Hasan, S Roy, E Tokumitsu, HY Chu, SC Kim, J JangApplied Surface Science 611, 155533, 2023122023