Muhammad Adi Negara

Muhammad Adi Negara

Stanford University - Stanford / United States
Others
AD Scientific Index ID: 1670277
person_outline Muhammad Adi Negara's MOST POPULAR ARTICLES
1-) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structuresS Monaghan, PK Hurley, K Cherkaoui, MA Negara, A SchenkSolid-State Electronics 53 (4), 438-444, 20091352009
2-) Electrical, structural, and chemical properties of films formed by electron beam evaporationK Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...Journal of Applied Physics 104 (6), 064113, 2008792008
3-) Impact of H< sub> 2</sub>/N< sub> 2</sub> annealing on interface defect densities in Si (100)/SiO< sub> 2</sub>/HfO< sub> 2</sub>/TiN gate stacksM Schmidt, MC Lemme, H Kurz, T Witters, T Schram, K Cherkaoui, ...Microelectronic engineering 80, 70-73, 200542*2005
4-) Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer DepositionDM Zhernokletov, MA Negara, RD Long, S Aloni, D Nordlund, ...ACS applied materials & interfaces 7 (23), 12774-12780, 2015502015
5-) Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide chargeMA Negara, K Cherkaoui, PK Hurley, CD Young, P Majhi, W Tsai, ...Journal of Applied Physics 105 (2), 2009372009